BibTeX:

@article{IJIRSTV3I5040,
     title={High electron mobility transistor-a review on analytical models},
     author={J.Shanthi and Dr.P.Vimala},
     journal={International Journal for Innovative Research in Science & Technology},
     volume={3},
     number={5},
     pages={103--114},
     year={},
     url={http://www.ijirst.org/articles/IJIRSTV3I5040.pdf},
     publisher={IJIRST (International Journal for Innovative Research in Science & Technology)},
}

In recent years, high electron mobility transistors (HEMTs) have attracted much attention in high-speed and high-power applications. One of the most interesting properties of these devices is the formation of the two-dimensional electron gas (2-DEG) with a very high electron mobility at the hetero interface. AlGaAs/GaAs HEMTs have been and are promising candidates for high speed and mm-wave applications. GaN-based HEMTs have attracted much attention for application in high-frequency and high-power devices due to the large bandgap, high saturated electron velocity, and high breakdown electric field. Significant improvements in the fabrication and performance of high electron mobility transistors (HEMT) have stimulated a considerable interest in the modeling of such structures. In this paper, we review working principle and various structures of HEMT, also different analytical models available for HEMT.

HEMT, MODFET, HFET, 2-DEG, Compact Model, Analytical Model, AlGaAs/GaAs, AlGaN/GaN, SG HEMT,DG HEMT, Tri-Gate HEMT, Nano Wire NCA HEMT, TCAD