BibTeX:

@article{IJIRSTV4I2028,
     title={Influence of N2:Ar Gas Ratio on Surface Morphology of CrN Coated Silicon Wafer},
     author={Pina Bhatt and H N Shah},
     journal={International Journal for Innovative Research in Science & Technology},
     volume={4},
     number={2},
     pages={109--111},
     year={},
     url={http://www.ijirst.org/articles/IJIRSTV4I2028.pdf},
     publisher={IJIRST (International Journal for Innovative Research in Science & Technology)},
}

Silicon wafer is widely used in electronics and other industrial application now a day. Surface morphology and surface area plays major role on performance of silicon wafer. Current work represents effect of Nitrogen and argon gas ratio on surface morphology of CrN coated silicon wafer by magnetron sputtering process. 10 × 10 mm size silicon wafer with (1 0 0) was selected as a substrate material and 99.9% pure Cr target was used for deposition. Range of gas ratio selected for applying coating was 20:80, 40:60, 50:50, 60:40 and 80:20. Working pressure for deposition was 8 × 10-3 mbar with rate of deposition 0.1 A0/S. Deposition temperature was 4000 C and 80 nm coating thickness developed during deposition. Maximum surface roughness noted at 50:50 N2:Ar gas ratio of 124 nm, while least surface roughness was achieved at 80:20 N2:Ar gas ratio of 28.4 nm.

Nirtogen-Argon gas ratio, CrN Coating, Magnetron Sputtering, Surface roughness